Selective precipitation of aluminium structures from the gas phase - using locally applied thin aluminium@ layers as catalysts in the pptn. process

• Main Authors: GOLUSDA, ERICH, 6374 STEINBACH, DE, STAFAST, HERBERT., 6200 WIESBADEN, DE
• Format: Patent
• Language: English; German
• Published: 23.12.1993
• Edition: 5
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

Method comprises a) applying aluminium locally as thin layers onto a substrate; and b) precipitating aluminium from the gas phase selectively onto the caalytically acting layers until a desired height of the structure has been attained. The thin selective aluminium layers - prior to the second process step - are pref. either protected against oxidn. caused by air, or subjected to oxidn.. Selective application of thin aluminium layers in the first process step takes place as laser-aided coating from the gas phase, as thermal vaporisation with the use of masks, or as metallisation. USE/ADVANTAGE - For manufacture of semiconductor components and products. It simplifies the manufacturing process, and eliminates the need for palladium, platinum or gold as catalyst materials.