Dynamische Halbleiterspeichervorrichtung sowie Verfahren zur Herstellung derselben

A groove, which runs vertically and horizontally, is formed in a substrate, thereby a plurality of silicon pillars are formed in a matrix manner. A field oxidation film is formed on the central portion of the groove. A drain diffusion layer is formed on the upper portion of each silicon pillar, and...

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Main Authors NITAYAMA, AKIHIRO, KAWASAKI, JP, HIEDA, KATSUHIKO, YOKOHAMA, JP, HORIGUCHI, FUMIO, TOKIO/TOKYO, JP, YAGISHITA, ATSUSHI, YOKOHAMA, JP
Format Patent
LanguageGerman
Published 07.09.1995
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A groove, which runs vertically and horizontally, is formed in a substrate, thereby a plurality of silicon pillars are formed in a matrix manner. A field oxidation film is formed on the central portion of the groove. A drain diffusion layer is formed on the upper portion of each silicon pillar, and a source diffusion layer is formed on the bottom portion of the groove. A gate electrode, serving as a word line, a storage node contacting the source diffusion layer, and a cell plate are sequentially buried to enclose the surroundings of each silicon pillar, and a bit line is formed in an uppermost layer, thereby a DRAM cell array is structured.
Bibliography:Application Number: DE19914139489