Vakuumverarbeitungsapparatur und Vakuumverarbeitungsverfahren

• Main Authors: NISHITANI, EISUKE, YOKOHAMA, KANAGAWA, JP, KOBAYASHI, SHIGERU, HIRATSUKA, KANAGAWA, JP, TSUZUKU, SUSUMU, TOKIO/TOKYO, JP, KISIMOTO, SATOSI, YOKOHAMA, KANAGAWA, JP, OKAMOTO, AKIRA, CHIGASAKI, KANAGAWA, JP, SHIMAMURA, HIDEAKI, YOKOHAMA, KANAGAWA, JP, YONEOKA, YUJI, YOKOHAMA, KANAGAWA, JP
• Format: Patent
• Language: German
• Published: 21.04.1994
• Edition: 5
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A vacuum treatment device for conducting various treatments of wafers in a vacuum tank and a method of film formation using said device, which is characterized in that temperature control of the wafers during film formation is performed using a radiation thermometer and, in particular, wafers are conveyed to each stage in a vacuum film forming chamber after emissivities thereof are corrected by a temperature correction stage in combination with the shutter, and are temperature-controlled to a fixed temperature to form a film thereon.