HERSTELLUNGSVERFAHREN FUER ABSOLUTDRUCKWANDLEREINHEITEN MIT HALBLEITERN

A method for manufacturing semiconductor absolute pressure sensor units includes anodically bonding a silicon sensor wafer (10) and a silicon cap wafer (12) with a borosilicate glass layer (32) disposed threbetween so as to surround respective sensor chips on the silicon sensor wafer (10) by introdu...

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Main Authors KOBAYASHI, RYOICHI, TOUKAI-MURA NAKA-GUN IBARAKI 319-11, JP, MIYAZAKI, ATSUSHI, TAKABA KATSUTA-SHI IBARAKI 312, JP, KOBORI, SHIGEYUKI, HITACHI-SHI IBARAKI 319-12, JP, YAMADA, KAZUJI, HITACHI-SHI IBARAKI 316, JP, SUZUKI, SEIKOU, HITACHIOOTA-SHI IBARAKI 313, JP
Format Patent
LanguageGerman
Published 03.12.1992
Edition5
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MEASURING
MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
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Summary:A method for manufacturing semiconductor absolute pressure sensor units includes anodically bonding a silicon sensor wafer (10) and a silicon cap wafer (12) with a borosilicate glass layer (32) disposed threbetween so as to surround respective sensor chips on the silicon sensor wafer (10) by introducing a matrix shaped conductive layer (28) in contact with and in alignment with the borosilicate glass layer (32), the matrix shaped conductive layer (28) is used as a negative electrode during anodic bonding operation so that a high bonding strength is obtained and sodium ions contained in the borosilicate glass layer (32) are kept away from bond regions after completing the anodically bonding operation.
Bibliography:Application Number: DE19883871550T