Halbleitervorrichtung sowie Verfahren zur Herstellung eines Feldeffekttransistors

A semiconductor integrated circuit device is disclosed which has an MOSFET with a lightly doped drain or LLD structure. A gate electrode layer is insulatively provided above a semiconductor substrate of p conductivity type. Source and drain layers of n conductivity type are formed in the substrate i...

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Bibliographic Details
Main Authors HIEDA, KATSUHIKO, YOKOHAMA, JP, TAKENOUCHI, NAOKO, TOKIO/TOKYO, JP
Format Patent
LanguageGerman
Published 20.01.1994
Edition5
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor integrated circuit device is disclosed which has an MOSFET with a lightly doped drain or LLD structure. A gate electrode layer is insulatively provided above a semiconductor substrate of p conductivity type. Source and drain layers of n conductivity type are formed in the substrate in such a manner as to be substantially self-aligned with the gate electrode. Each of these source and drain layers is comprised of a heavily doped diffusion layer and a lightly doped diffusion layer. The n- diffusion layer is deep enough to fully surround the heavily doped layer in the substrate. The n- diffusion layer has a step-like cross-section, whereby the effective channel length of MOSFET is increased inside the substrate to increase the punch-through voltage level.
Bibliography:Application Number: DE19873709708