DE3707522

The disclosed magnetic nitride T-M-N film (T is at least one metal selected from the group consisting of Fe, Co, Ni and Mn; M is at least one metal selected from the group consisting of Nb, Zr, Ti, Ta, Hf, Cr, W and Mo; N is nitrogen (N)) has excellent wear resistance and high electric resistivity,...

Full description

Saved in:
Bibliographic Details
Main Authors OMATA, YUJI, IBARAKI, JP, OSANO, KOICHI, NEYAGAWA, JP, SAKAKIMA, HIROSHI, HIRAKATA, JP, SATOMI, MITSUO, KATANO, JP, KUGIMIYA, KOICHI, TOYONAKA, JP
Format Patent
LanguageEnglish
Published 23.07.1992
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRICITY
INDUCTANCES
MAGNETS
SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
TRANSFORMERS
Online AccessGet full text

Cover

More Information
Summary:The disclosed magnetic nitride T-M-N film (T is at least one metal selected from the group consisting of Fe, Co, Ni and Mn; M is at least one metal selected from the group consisting of Nb, Zr, Ti, Ta, Hf, Cr, W and Mo; N is nitrogen (N)) has excellent wear resistance and high electric resistivity, and the compositionally modulated nitride film shows a soft magnetic property, as well as thermal stability of the properties.
Bibliography:Application Number: DE19873707522