DE3620329

A single-crystal substrate of silicon carbide comprising a single-crystal substrate member of a material other than alpha -SiC, and a single-crystal layer of alpha -SiC formed over the substrate member with a ground layer provided between the substrate member and the single-crystal layer, the ground...

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Bibliographic Details
Main Authors SUZUKI, AKIRA, NARA, JP, SHIGETA, MITSUHIRO, TENRI, NARA, JP, FURUKAWA, KATSUKI, SAKAI, OSAKA, JP
Format Patent
LanguageEnglish
Published 08.09.1988
Edition4
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Summary:A single-crystal substrate of silicon carbide comprising a single-crystal substrate member of a material other than alpha -SiC, and a single-crystal layer of alpha -SiC formed over the substrate member with a ground layer provided between the substrate member and the single-crystal layer, the ground layer comprising a single-crystal layer of nitride of AlN, GaN or AlxGa1-xN (0<x<1) having a hexagonal crystal structure or a crystal layer of the same structure made of a mixture of SiC and at least one of the nitrides; and a method for fabricating the same.
Bibliography:Application Number: DE19863620329