Process for patterning a masking layer for microlithography

An ion beam microlithographic process for patterning masking layers, especially in fabricating integrated circuits, uses silver ions or copper ions for positive sensitisation of poly(methyl methacrylate) layers or polystyrene layers deposited in the plasma, which ions are able to cancel the negative...

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Bibliographic Details
Main Authors FRITZSCHE,CHRISTIAN,.DR, ROTHEMUND,WOLFRAM,.DR
Format Patent
LanguageEnglish
German
Published 24.07.1986
Edition4
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:An ion beam microlithographic process for patterning masking layers, especially in fabricating integrated circuits, uses silver ions or copper ions for positive sensitisation of poly(methyl methacrylate) layers or polystyrene layers deposited in the plasma, which ions are able to cancel the negative effect of crosslinking as a result of the ion bombardment during the plasma polymerisation.
Bibliography:Application Number: DE19853501848