DE3046358

A thin film, field effect transistor device of V-mos-like construction having a source region, a drain region, a gate insulator 80, a thin film 76 of deposited amorphous alloy including at least silicon and fluorine coupled to the source region, the drain region and the gate insulator and a gate ele...

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Bibliographic Details
Main Authors FLASCK, RICHARD A., ROCHESTER, MICH., US, HOLMBERG, SCOTT H., MILFORD, MICH., US
Format Patent
LanguageEnglish
Published 26.02.1987
Edition4
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:A thin film, field effect transistor device of V-mos-like construction having a source region, a drain region, a gate insulator 80, a thin film 76 of deposited amorphous alloy including at least silicon and fluorine coupled to the source region, the drain region and the gate insulator and a gate electrode 84 in contact with the gate insulator. Preferably, the amorphous alloy also contains hydrogen and is a -Sia:Fb:Hc, where a is between 80 and 98 atomic percent, b is between 1 and 10 atomic percent and c is between 1 and 10 atomic percent. The field effect transistor can be deposited on various substrates with an insulator material between the active regions of the thin film, field effect transistor and a conducting substrate.
Bibliography:Application Number: DE19803046358