DE3024319

In the continuous prodn. of SiHCl3 by reacting SiC14 with H2 and the HCl formed with crude Si, a mixt. of SiCl4 and H2 is exposed to a temp. of 900-1300 deg.C for 200-2 s in a high temp. reactor and the resultant HC1, after cooling is reacted with Si in a sec. reactor for 200-2 s at 280-350 deg.C, f...

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Main Authors GOEPPINGER, ALOIS, GRIESSHAMMER, RUDOLF. DR., 8263 BURGHAUSEN, DE, SCHWAB, MICHAEL. DR., 8262 NEUOETTING, DE, KOEPPL, FRANZ., 8261 ALTOETTING, DE
Format Patent
LanguageEnglish
Published 21.07.1983
Subjects
CHEMISTRY
COMPOUNDS THEREOF
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
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Summary:In the continuous prodn. of SiHCl3 by reacting SiC14 with H2 and the HCl formed with crude Si, a mixt. of SiCl4 and H2 is exposed to a temp. of 900-1300 deg.C for 200-2 s in a high temp. reactor and the resultant HC1, after cooling is reacted with Si in a sec. reactor for 200-2 s at 280-350 deg.C, forming more SiHCl3. The SiHCl3 from the 2 reactions is condensed and sepd., whilst the unreacted and reformed SiCl4 and H2 are returned to the high temp. reactor. Pref. the sec. reactor is a fluidised bed reactor. The temp. in this bed is pref. adjusted to 280-350 deg.C by cooling with a tube filled with liq. SiCl4 dipping into the bed. The SiCl4 vapour formed on cooling is pref. mixed with H2 and passed to the high temp. reactor. Waste SiCl4 formed in the redn. of SiHCl3 to very pure Si is converted to SiHCl3 as economically as possible.
Bibliography:Application Number: DE19803024319