Prodn. of opto-coupler formed by LED and phototransistor - uses separate securing of diode and transistor, involving grooved metallised multilayer board for diode and flat board for transistor
The prodn. uses adjacent chips so that the output of the LED is directly received by the phototransistor. The diode and phototransistor are separately prod. and mounted together on a ceramic support. The diode (D) is mounted in a multi-faed bridge structure metallised (M) on the inside. A channel (N...
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Main Authors | , |
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Format | Patent |
Language | English German |
Published |
07.08.1980
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Edition | 3 |
Subjects | |
Online Access | Get full text |
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Abstract | The prodn. uses adjacent chips so that the output of the LED is directly received by the phototransistor. The diode and phototransistor are separately prod. and mounted together on a ceramic support. The diode (D) is mounted in a multi-faed bridge structure metallised (M) on the inside. A channel (N) is cut in the bridge underside so that one diode connection can be bonded to one side of a metallisation (K), and the other side of teh diode to the other (A) for anode and cathode connection (LB, LK). The phototransistor (FT) is mounted on the base plate (TLP) with bondings to connector terminals (LB) for the base (B) and emitter (E). A direct cemented connection between the phototransistor and a terminal plate is used for the collector (C). The U-shaped diode carrier is soldered to the base plate connections, and the underside of tehU between the diode and phototransistor is filled with a transparent compound. |
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AbstractList | The prodn. uses adjacent chips so that the output of the LED is directly received by the phototransistor. The diode and phototransistor are separately prod. and mounted together on a ceramic support. The diode (D) is mounted in a multi-faed bridge structure metallised (M) on the inside. A channel (N) is cut in the bridge underside so that one diode connection can be bonded to one side of a metallisation (K), and the other side of teh diode to the other (A) for anode and cathode connection (LB, LK). The phototransistor (FT) is mounted on the base plate (TLP) with bondings to connector terminals (LB) for the base (B) and emitter (E). A direct cemented connection between the phototransistor and a terminal plate is used for the collector (C). The U-shaped diode carrier is soldered to the base plate connections, and the underside of tehU between the diode and phototransistor is filled with a transparent compound. |
Author | SONST,PETER WILCZEK,PETER |
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Discipline | Medicine Chemistry Sciences |
DocumentTitleAlternate | VERFAHREN ZUR HERSTELLUNG VON OPTO- KOPPLERN |
Edition | 3 |
ExternalDocumentID | DE2903587A1 |
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Notes | Application Number: DE19792903587 |
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PublicationDate | 19800807 |
PublicationDateYYYYMMDD | 1980-08-07 |
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PublicationDecade | 1980 |
PublicationYear | 1980 |
RelatedCompanies | TELEFONBAU UND NORMALZEIT GMBH |
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Snippet | The prodn. uses adjacent chips so that the output of the LED is directly received by the phototransistor. The diode and phototransistor are separately prod.... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | Prodn. of opto-coupler formed by LED and phototransistor - uses separate securing of diode and transistor, involving grooved metallised multilayer board for diode and flat board for transistor |
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