Prodn. of opto-coupler formed by LED and phototransistor - uses separate securing of diode and transistor, involving grooved metallised multilayer board for diode and flat board for transistor

The prodn. uses adjacent chips so that the output of the LED is directly received by the phototransistor. The diode and phototransistor are separately prod. and mounted together on a ceramic support. The diode (D) is mounted in a multi-faed bridge structure metallised (M) on the inside. A channel (N...

Full description

Saved in:
Bibliographic Details
Main Authors SONST,PETER, WILCZEK,PETER
Format Patent
LanguageEnglish
German
Published 07.08.1980
Edition3
Subjects
Online AccessGet full text

Cover

Loading…
Abstract The prodn. uses adjacent chips so that the output of the LED is directly received by the phototransistor. The diode and phototransistor are separately prod. and mounted together on a ceramic support. The diode (D) is mounted in a multi-faed bridge structure metallised (M) on the inside. A channel (N) is cut in the bridge underside so that one diode connection can be bonded to one side of a metallisation (K), and the other side of teh diode to the other (A) for anode and cathode connection (LB, LK). The phototransistor (FT) is mounted on the base plate (TLP) with bondings to connector terminals (LB) for the base (B) and emitter (E). A direct cemented connection between the phototransistor and a terminal plate is used for the collector (C). The U-shaped diode carrier is soldered to the base plate connections, and the underside of tehU between the diode and phototransistor is filled with a transparent compound.
AbstractList The prodn. uses adjacent chips so that the output of the LED is directly received by the phototransistor. The diode and phototransistor are separately prod. and mounted together on a ceramic support. The diode (D) is mounted in a multi-faed bridge structure metallised (M) on the inside. A channel (N) is cut in the bridge underside so that one diode connection can be bonded to one side of a metallisation (K), and the other side of teh diode to the other (A) for anode and cathode connection (LB, LK). The phototransistor (FT) is mounted on the base plate (TLP) with bondings to connector terminals (LB) for the base (B) and emitter (E). A direct cemented connection between the phototransistor and a terminal plate is used for the collector (C). The U-shaped diode carrier is soldered to the base plate connections, and the underside of tehU between the diode and phototransistor is filled with a transparent compound.
Author SONST,PETER
WILCZEK,PETER
Author_xml – fullname: SONST,PETER
– fullname: WILCZEK,PETER
BookMark eNqNjr0KwkAQhFNo4d877AMY8QdRS9GIhYWFvay5jR6ct8feJuDb-WgmImhpNQMz8-12k5ZnT53keRQ2fgRcAAflNOcyOBIoWO5k4PKAQ7YF9AbCjZVV0EcblQVSKCNFiBRQUKk2eSnWXxuUsWzovfoOhmB9xa5qKldhrmr8nRSds7GxpVPr8FHfvjCKaT744RQO9Sf4YvtJu0AXafDRXgK77LTZpxT4TDFgTp70vM2mq_FsvlysJ7M_Ki-NvmJz
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
DocumentTitleAlternate VERFAHREN ZUR HERSTELLUNG VON OPTO- KOPPLERN
Edition 3
ExternalDocumentID DE2903587A1
GroupedDBID EVB
ID FETCH-epo_espacenet_DE2903587A13
IEDL.DBID EVB
IngestDate Fri Jul 19 11:50:05 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
German
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_DE2903587A13
Notes Application Number: DE19792903587
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19800807&DB=EPODOC&CC=DE&NR=2903587A1
ParticipantIDs epo_espacenet_DE2903587A1
PublicationCentury 1900
PublicationDate 19800807
PublicationDateYYYYMMDD 1980-08-07
PublicationDate_xml – month: 08
  year: 1980
  text: 19800807
  day: 07
PublicationDecade 1980
PublicationYear 1980
RelatedCompanies TELEFONBAU UND NORMALZEIT GMBH
RelatedCompanies_xml – name: TELEFONBAU UND NORMALZEIT GMBH
Score 2.354642
Snippet The prodn. uses adjacent chips so that the output of the LED is directly received by the phototransistor. The diode and phototransistor are separately prod....
SourceID epo
SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title Prodn. of opto-coupler formed by LED and phototransistor - uses separate securing of diode and transistor, involving grooved metallised multilayer board for diode and flat board for transistor
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19800807&DB=EPODOC&locale=&CC=DE&NR=2903587A1
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LT4NAEN40atSbVo31lT0YTuKjhS4ciLFA0xj7iKmmt2aXXSoJsqRQjf_On-bs2tdFbxM2-4XMMjMfw8yA0CVvuozZzDW5RalpEeaY1Ha5aVGb8EhwRqjKQ3Z7zc6L9TiyRxWULHph9JzQTz0cESwqAnsvtb_OV0msQNdWFjcsgUvyvj30AoP_tos5igARI2h54aAf9H3D970gNHrPXt29bdgOeYAXpU1g0Y6q_gtfW6opJV-PKO09tDUAsKzcRxWRVdGOv_jxWhVtd-ffu0Gcm15xgL4H4OqyayxjLPNSmpGc5amYYkU6BcfsCz-FAaYZx_mbLGWpYpAeAYJNPCtEgQuhx3wLEHSKfaKgeCK50LtWG65wkoHTUpkGPAFi_QHw76CNNE0KJaoSxJQCVcdMwvOl7mANJ05pubawgj1EuB0O_Y4Jqhgv1T4OwqXSGkdoI5OZOEaY2o2Y3dWJKyKgUpbrRNStQ4yrc_CaVkxqqPYnzMk_a6doV52frq0jZ2ijnM7EOcT7kl3ok_oBRN21jw
link.rule.ids 230,309,786,891,25585,76894
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LT4NAEN401VhvWjXW5x4MJ_FBocChMRZoqvYVU01vzS67rSTIkkI1_jt_mrNrXxe9TdjsFzLLzHwMMwNCF6zmUmpRV2cmIbppU0cnlst0k1g2CzmjNpF5yE631noxH4fWsICiRS-MmhP6qYYjgkWFYO-58tfpKonlq9rK7JpGcEncNQd1X2O_7WKOJEC25jfqQb_n9zzN8-p-oHWf64Z7U7Uc-x5elDaAYbtyzH7w2pBNKel6RGnuoM0-gCX5LirwpIxK3uLHa2W01Zl_7wZxbnrZHvrug6tLrrAYY5HmQg_FLI35FEvSyRmmX7gd-JgkDKdvIhe5jEFqBAjW8SzjGc64GvPNQVAp9omEYpFgXO1abbjEUQJOS2Ya8ASI9QfAv4M24jjKpChLEGMCVB1TAc-XvIM1nHFM8rWFFew-ws1g4LV0UMVoqfaRHyyVVj1AxUQk_BBhYlXH9NawXR4ClTJdJySuATHOYOA1zbFdQZU_YY7-WTtHpdag0x61H7pPx2hbnqWqs7NPUDGfzvgpxP6cnqlT-wH3xriC
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Prodn.+of+opto-coupler+formed+by+LED+and+phototransistor+-+uses+separate+securing+of+diode+and+transistor%2C+involving+grooved+metallised+multilayer+board+for+diode+and+flat+board+for+transistor&rft.inventor=SONST%2CPETER&rft.inventor=WILCZEK%2CPETER&rft.date=1980-08-07&rft.externalDBID=A1&rft.externalDocID=DE2903587A1