Prodn. of opto-coupler formed by LED and phototransistor - uses separate securing of diode and transistor, involving grooved metallised multilayer board for diode and flat board for transistor

The prodn. uses adjacent chips so that the output of the LED is directly received by the phototransistor. The diode and phototransistor are separately prod. and mounted together on a ceramic support. The diode (D) is mounted in a multi-faed bridge structure metallised (M) on the inside. A channel (N...

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Bibliographic Details
Main Authors SONST,PETER, WILCZEK,PETER
Format Patent
LanguageEnglish
German
Published 07.08.1980
Edition3
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The prodn. uses adjacent chips so that the output of the LED is directly received by the phototransistor. The diode and phototransistor are separately prod. and mounted together on a ceramic support. The diode (D) is mounted in a multi-faed bridge structure metallised (M) on the inside. A channel (N) is cut in the bridge underside so that one diode connection can be bonded to one side of a metallisation (K), and the other side of teh diode to the other (A) for anode and cathode connection (LB, LK). The phototransistor (FT) is mounted on the base plate (TLP) with bondings to connector terminals (LB) for the base (B) and emitter (E). A direct cemented connection between the phototransistor and a terminal plate is used for the collector (C). The U-shaped diode carrier is soldered to the base plate connections, and the underside of tehU between the diode and phototransistor is filled with a transparent compound.
Bibliography:Application Number: DE19792903587