DE2837762

The dv/dt characteristics of a bidirectional thyristor are improved by irradiating selected portions of the device with high energy crystal lattice-damaging particles. In an exemplary embodiment, the commutating dv/dt of a triac is enhanced by the masked, selective irradiation of the boundaries betw...

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Main Authors SHENG, WILLIAM WING, AUBURN, N.Y., US, SUN, YEN SHENG EDMUND, LIVERPOOL, N.Y., US, TEFFT, EDWARD GEORGE, AUBURN, N.Y., US
Format Patent
LanguageEnglish
Published 10.01.1985
Edition3
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The dv/dt characteristics of a bidirectional thyristor are improved by irradiating selected portions of the device with high energy crystal lattice-damaging particles. In an exemplary embodiment, the commutating dv/dt of a triac is enhanced by the masked, selective irradiation of the boundaries between conducting portions and between the gate and the conducting portions.
Bibliography:Application Number: DE19782837762