FELDEFFEKTTRANSISTOR MIT EXTREM KURZER KANALLAENGE

A field effect transistor having an extremely short channel length in which a doped semiconductor layer of one conductivity type has oppositely doped source and drain zones in a surface side thereof. A first gate electrode is separated from the semiconductor layer surface by an insulating layer. The...

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Bibliographic Details
Main Author SCHRADER,LOTHAR,DR
Format Patent
LanguageGerman
Published 11.01.1979
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A field effect transistor having an extremely short channel length in which a doped semiconductor layer of one conductivity type has oppositely doped source and drain zones in a surface side thereof. A first gate electrode is separated from the semiconductor layer surface by an insulating layer. The first gate electrode covers the region between the source and drain zones with the exception of a strip-like semiconductor region directly adjoining the source zone. A second gate electrode is provided above the strip-like semiconductor region and is insulated from the first gate electrode by a second insulating layer. The first gate electrode is connected to a bias voltage source and the second gate electrode is arranged to be connected to a control voltage.
Bibliography:Application Number: DE19772729656