Inversion layer-free p-conductive semiconductor region - is produced by increasing impurity concentration by ion implantation prior to insulating film application

The process is intended for production of semiconductor region by wet oxidation. It forms a p-conductive semiconductor region, free of any inversion layer, formed in a semiconductor substrate and coated by an insulating film. The impurity concentration on the surface of the p-doped semiconductor reg...

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Bibliographic Details
Main Author OTT,GUENTER
Format Patent
LanguageEnglish
German
Published 02.03.1978
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The process is intended for production of semiconductor region by wet oxidation. It forms a p-conductive semiconductor region, free of any inversion layer, formed in a semiconductor substrate and coated by an insulating film. The impurity concentration on the surface of the p-doped semiconductor region is increased by ion implantation prior to application of the insulating film. Preferably boron ions are implanted into a p-conductive silicon semiconductor region with a conductivity of approximately 10 ohms per cm. Then the surface of the substrate over the implantation region is passivated by an oxide layer. The ion implantation may take place under approximately 100 keV. In order to obtain a surface concentration of 1016 to 1017 atom/cu. cm, the dose of ion implantation contains 1 - 5 . 1012 boron ions/sq. cm.
Bibliography:Application Number: DE19762638956