DE2554296

A complementary field effect transistor structure which eliminates the problems caused by parasitic currents between devices. The currents are contained within parasitic bipolar devices formed between the various regions of the FETs. A portion of the collector current of the parasitic bipolar device...

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Main Authors WIEDMANN, SIEGFRIED KURT. DR., 7000 STUTTGART, DE, BHATIA, HARSARAN SINGH, WAPPINGERS FALLS, N.Y., US, O'ROURKE, GERALD DENNIS, POUGHKEEPSIE, N.Y., US
Format Patent
LanguageEnglish
Published 28.11.1985
Edition4
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A complementary field effect transistor structure which eliminates the problems caused by parasitic currents between devices. The currents are contained within parasitic bipolar devices formed between the various regions of the FETs. A portion of the collector current of the parasitic bipolar devices is drained away so that the loop gain is less than one. This is achieved by placing guard regions of conductivity type which are the same as the channel type of the transistors adjacent said regions. The guard region is preferably in the form of a continuous ring around its associated FET.
Bibliography:Application Number: DE19752554296