Semiconductor memory element - of long stability with differential insulating layers in field effect structure (NL040576)

A semiconductor memory element with long-term stable storage characteristics has over the source region an second insulating layer (SiO2) of greater effective thickness than the first insulating layer which it adjoins. A third insulating layer over the drain region also adjoins the first and has a g...

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Bibliographic Details
Main Author HORIUCHI,MASATADA
Format Patent
LanguageEnglish
German
Published 06.05.1976
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor memory element with long-term stable storage characteristics has over the source region an second insulating layer (SiO2) of greater effective thickness than the first insulating layer which it adjoins. A third insulating layer over the drain region also adjoins the first and has a greater thickness than the first. A metal film over the first insulating layer acts as the charge storage element. A gate is arranged above it; electrodes are joined both to the source and to the drain. This results in a field-effect memory element which stores information over long periods. It requires small WRITE and CLEAR fields. Threshold voltages far apart from each other ensure an easy read-out. Very short channel lengths give fast access and high storage density.
Bibliography:Application Number: DE19752548903