ABLOESEMITTEL FUER FOTOLACKE
Hardened photolacquer on semi-conductors and integrated circuits for etching purposes are stripped therefrom employing, preferably at a temperature above 75 DEG C., a stripping composition consisting essentially of 20-50 weight percent of at least one alkylbenzenesulfonic acid of 12-20 carbon, and 8...
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Main Authors | , |
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Format | Patent |
Language | German |
Published |
26.05.1976
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Edition | 2 |
Subjects | |
Online Access | Get full text |
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Summary: | Hardened photolacquer on semi-conductors and integrated circuits for etching purposes are stripped therefrom employing, preferably at a temperature above 75 DEG C., a stripping composition consisting essentially of 20-50 weight percent of at least one alkylbenzenesulfonic acid of 12-20 carbon, and 80-50 weight percent of a chlorine-free, aromatic hydrocarbon having a boiling point above 150 DEG C. |
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Bibliography: | Application Number: DE19742454399 |