ABLOESEMITTEL FUER FOTOLACKE

Hardened photolacquer on semi-conductors and integrated circuits for etching purposes are stripped therefrom employing, preferably at a temperature above 75 DEG C., a stripping composition consisting essentially of 20-50 weight percent of at least one alkylbenzenesulfonic acid of 12-20 carbon, and 8...

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Bibliographic Details
Main Authors HEINZ,NEISIUS,KARL, BAEUMER,WILHELM,DR
Format Patent
LanguageGerman
Published 26.05.1976
Edition2
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
PRINTED CIRCUITS
SEMICONDUCTOR DEVICES
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Summary:Hardened photolacquer on semi-conductors and integrated circuits for etching purposes are stripped therefrom employing, preferably at a temperature above 75 DEG C., a stripping composition consisting essentially of 20-50 weight percent of at least one alkylbenzenesulfonic acid of 12-20 carbon, and 80-50 weight percent of a chlorine-free, aromatic hydrocarbon having a boiling point above 150 DEG C.
Bibliography:Application Number: DE19742454399