DE2148132

An improved method of making piezoelectric thin films comprising zinc oxide having a hexagonal crystalline form by using a cathodic sputtering step capable of controlling the direction of crystallographic orientation in said piezoelectric thin films, characterized in that said cathodic sputtering st...

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Bibliographic Details
Main Authors WASA, KIYOTAKA, NARA, HAYAKAWA, SHIGERU, HIRAKATA, OSAKA
Format Patent
LanguageEnglish
Published 10.05.1979
Edition2
Subjects
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Summary:An improved method of making piezoelectric thin films comprising zinc oxide having a hexagonal crystalline form by using a cathodic sputtering step capable of controlling the direction of crystallographic orientation in said piezoelectric thin films, characterized in that said cathodic sputtering step comprises co-sputtering of copper or aluminum with zinc in an oxidizing atmosphere.
Bibliography:Application Number: DE19712148132