Checking surface processing of semiconductor wafer, using diffused light testing and comparing angle-dependent signals

The method involves checking the surface processing of a planar workpiece after the processing, by scattered light measurement at individual defects, at least two detection angles. The angle-dependent signals are compared with each other. The defects may be crystal originated particles (COPs). Verfa...

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Bibliographic Details
Main Authors WAGNER, PETER, PASSEK, FRIEDRICH
Format Patent
LanguageEnglish
German
Published 10.05.2001
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
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Summary:The method involves checking the surface processing of a planar workpiece after the processing, by scattered light measurement at individual defects, at least two detection angles. The angle-dependent signals are compared with each other. The defects may be crystal originated particles (COPs). Verfahren zur Kontrolle einer mechanischen oder chemomechanischen Oberflächenbearbeitung eines ebenen Werkstücks, insbesondere einer Halbleiterscheibe mittels einer Streulichtuntersuchung nach der Oberflächenbearbeitung, das dadurch gekennzeichnet ist, daß die Streulichtmessung unter zumindest zwei Detektionswinkeln an einzelnen Defekten erfolgt und die winkelabhängigen Signale miteinander verglichen werden.
Bibliography:Application Number: DE1999149578