X=ray lithography mask useful in semiconductor industry

Novel X-ray mask comprises a membrane (41) having an oxide layer provided with an absorber pattern, the membrane being supported on a substrate (40) which exposes a membrane region in which the absorber pattern is located. Preferably, the oxide layer (43) consists of Al2O3, MgO or ITO. Also claimed...

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Bibliographic Details
Main Authors LEE, DON-HEE, ANYANG, KR, SONG, KIANG, SEOUL/SOUL, KR, PARK, CHIL-KEUN, ANYANG, KR, JEON, YOUNG-SAM, ANYANG, KR
Format Patent
LanguageEnglish
German
Published 05.03.1998
Edition6
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:Novel X-ray mask comprises a membrane (41) having an oxide layer provided with an absorber pattern, the membrane being supported on a substrate (40) which exposes a membrane region in which the absorber pattern is located. Preferably, the oxide layer (43) consists of Al2O3, MgO or ITO. Also claimed is an X-ray mask production process involving: (a) forming first and second oxide layers on a membrane formed on a substrate; (b) etching a predetermined portion of the substrate to expose the membrane; (c) structuring the second oxide layer to form a pattern; (d) forming an absorber (47) over the entire surface; and (e) etching the absorber to expose the surface of the pattern which is then removed to form an absorber pattern on the first oxide layer. Further claimed is a similar X-ray mask production process in which the first oxide layer is omitted.
Bibliography:Application Number: DE1997135165