Halbleiterkristallscheiben -Wärmebehandlungsvorrichtung

• Main Authors: KOH, YOUNG-LARK, SEOUL/SOUL, KR, KANG, SEONG-HUN, SEOUL/SOUL, KR, LEE, JUNG-KYU, SEOUL/SOUL, KR
• Format: Patent
• Language: German
• Published: 02.04.1998
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The apparatus comprises: a process chamber 21, a susceptor 22 on which a wafer is mounted inside the process chamber, a resistance heater 29 for heating the susceptor, a lamp 28 installed at the top of the process chamber for raising the temperature of the process chamber up to a temperature required in the process, a gas injector 33 installed on one side of the process chamber for supplying gas to the process chamber, and a gas heater 34 mounted on the gas injector for preheating gas supplied to the process chamber. The wafer is held on the susceptor by vacuum supplied to a groove 24 and is lifted off the susceptor by pins 25. The lamp is used for temperatures up to 1200{C whilst the heater 29 is used for temperatures up to 500{C. The heater 34 preheats the gas to between 50 and 800{C.