Sputteranlage mit zwei längserstreckten Magnetrons

• Main Authors: ERBKAMM, WOLFGANG., 01257 DRESDEN, DE, REHN, STANLEY, 01099 DRESDEN, DE, BEISTER, GUENTER. ER.NAT., 01326 DRESDEN, DE, STRUEMPFEL, JOHANNES. ER.NAT., 01277 DRESDEN, DE
• Format: Patent
• Language: German
• Published: 06.11.1997
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The invention concerns a sputtering installation with two longitudinally placed magnetrons which are arranged adjacent to each other, and each has a target on the upper surface. The aim of the invention is to increase the use of targets in a sputtering installation with two magnetrons which lie adjacent to each other. This aim is attained in that the discharge resistance of a magnetron along the directrix is so homogeneous that a partial discharge resistance of a target point on the directrix has the same magnitude as the partial discharge resistance of another target point on the directrix.