Verfahren zum Herstellen von Halbleiterbauelementen aus Galliumarsenid

• Main Author: RICHARD ANTELL,GEORGE
• Format: Patent
• Language: German
• Published: 18.03.1971
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

1,098,564. Semi-conductor devices. STANDARD TELEPHONES & CABLES Ltd Sept. 20, 1966, No. 41973/66. Heading H1K A device comprising a layer of semi-insulating gallium arsenide sandwiched between two semiconducting layers is formed by one of two methods. In the first the semi-insulating layer is formed by diffusing the deep donor oxygen into a layer of P-type gallium arsenide to fully compensate the acceptor impurities in a surface region, and a P or N layer formed by diffusion of acceptor or donor into the surface of this region. In the second method, starting with an N-type layer, the semi-insulating layer is formed by diffusing oxygen and a shallow acceptor into it in such a manner as to form a surface P-type layer in which the acceptor predominates and an underlying semi-insulating layer in which the oxygen fully compensates the acceptor impurity. In an alternative method in which the N-type layer as produced contains a higher concentration of oxygen than of shallow donors the same effect is produced by diffusion of acceptor only. In both cases the treated N or P layer may be a layer epitaxially grown on an N or P-type substrate and further layers may be formed in the outer diffused layer by further diffusions. In the first method the oxygen may be diffused direct or through a deposited silicon dioxide layer, from an atmosphere of oxygen alone or mixed with argon, from water vapour, or from arsenic trioxide or gallium oxide mixed with water vapour. Alternatively the oxygen is introduced by ion bombardment or lodged in a reactively sputtered silica film prior to diffusion. In the second method the oxygen and acceptor may be simultaneously diffused from a layer of zinc-doped silica.