VERFAHREN ZUM HERSTELLEN VON MIKRO-HALBLEITER-LEUCHTDIODEN-STRUKTUREN UND HALBLEITER-LEUCHTDIODE

In an embodiment a method for producing a plurality of micro semiconductor LED structures in a wafer includes epitaxially growing a semiconductor layer over a growth substrate wafer, applying a hard-mask material layer over the semiconductor layer, wherein a hard-mask material layer includes a plura...

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Bibliographic Details
Main Authors Kreiner, Laura, Lex, Andreas, Avramescu, Adrian Stefan
Format Patent
LanguageGerman
Published 08.08.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In an embodiment a method for producing a plurality of micro semiconductor LED structures in a wafer includes epitaxially growing a semiconductor layer over a growth substrate wafer, applying a hard-mask material layer over the semiconductor layer, wherein a hard-mask material layer includes a plurality of adjacently arranged windows facing towards the semiconductor layer, introducing depressions into the semiconductor layer in the windows by sublimation and epitaxially growing a semiconductor light-emitting diode structure in each of the depressions.
Bibliography:Application Number: DE20221104849T