STRAHLUNGSEMITTIERENDER HALBLEITERLASER UND VERFAHREN ZUM BETREIBEN EINES STRAHLUNGSEMITTIERENDEN HALBLEITERLASERS
The invention relates to a radiation-emitting semiconductor laser comprising-a semiconductor body comprising an active region which is designed to generate electromagnetic radiation, -a resonator which has a first end region and a second end region, and -a first sensor layer which is designed to mea...
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Main Authors | , |
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Format | Patent |
Language | German |
Published |
02.02.2023
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Subjects | |
Online Access | Get full text |
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Summary: | The invention relates to a radiation-emitting semiconductor laser comprising-a semiconductor body comprising an active region which is designed to generate electromagnetic radiation, -a resonator which has a first end region and a second end region, and -a first sensor layer which is designed to measure the temperature of the semiconductor body, wherein the active region is located in the resonator in such a way that the electromagnetic radiation generated in the active region during operation is electromagnetic laser radiation, and -the first sensor layer is located in the first active end region of the resonator. The invention also relates to a method for operating a radiation-emitting semiconductor laser. |
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Bibliography: | Application Number: DE20211102472T |