OPTOELEKTRONISCHES HALBLEITERBAUELEMENT MIT ABSCHNITTEN EINER LEITFÄHIGEN SCHICHT UND VERFAHREN ZUR HERSTELLUNG EINES OPTOELEKTRONISCHEN HALBLEITERBAUELEMENTS

• Main Author: Eberhard, Franz
• Format: Patent
• Language: German
• Published: 02.12.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An optoelectronic semiconductor device may include a first and second semiconductor layer having a first and second conductivity type, respectively, a first contact structure, a contact layer, and a separating layer. Contact holes are arranged in the separating layer. The optoelectronic semiconductor device may include portions of a conductive layer arranged over a side of the separating layer facing away from the contact layer. The portions of the conductive layer are each connected to a conducting material in the contact holes. The first contact structure is connected to the contact layer via the portions of the conductive layer and the conducting material. A length of each of the portions is greater than a greatest width of the portions. The length denotes a shortest distance between an associated contact hole and a conductive material between adjacent portions, and the width is measured perpendicular to the length.