HALBLEITERLASER, BETRIEBSVERFAHREN FÜR EINEN HALBLEITERLASER UND METHODE ZUR BESTIMMUNG DES OPTIMALEN FÜLLFAKTORS EINES HALBLEITERLASERS

In one embodiment, the semiconductor laser (1) comprises a semiconductor layer sequence (2) based on the material system AlInGaN with at least one active zone (22) for generating laser radiation. A heat sink (3) is thermally connected to the semiconductor layer sequence (2) and has a thermal resista...

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Bibliographic Details
Main Authors Ali, Muhammad, Stojetz, Bernhard, König, Harald, Lell, Alfred
Format Patent
LanguageGerman
Published 03.09.2020
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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Summary:In one embodiment, the semiconductor laser (1) comprises a semiconductor layer sequence (2) based on the material system AlInGaN with at least one active zone (22) for generating laser radiation. A heat sink (3) is thermally connected to the semiconductor layer sequence (2) and has a thermal resistance towards the semiconductor layer sequence (2). The semiconductor layer sequence (2) is divided into a plurality of emitter strips (4) and each emitter strip (4) has a width (b) of at most 0.3 mm in the direction perpendicular to a beam direction (R). The emitter strips (4) are arranged with a filling factor (FF) of less than or equal to 0.4. The filling factor (FF) is set such that laser radiation having a maximum optical output power (P) can be generated during operation.
Bibliography:Application Number: DE20181106452T