OPTOELEKTRONISCHER HALBLEITERCHIP UND VERFAHREN ZUR HERSTELLUNG EINES OPTOELEKTRONISCHEN HALBLEITERCHIPS

An optoelectronic semiconductor chip includes a semiconductor body including a first semiconductor region, a second semiconductor region and an active zone disposed between the first and second semiconductor regions, an electrically conductive contact layer arranged on a side of the first semiconduc...

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Bibliographic Details
Main Author Höppel, Lutz
Format Patent
LanguageGerman
Published 03.01.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An optoelectronic semiconductor chip includes a semiconductor body including a first semiconductor region, a second semiconductor region and an active zone disposed between the first and second semiconductor regions, an electrically conductive contact layer arranged on a side of the first semiconductor region facing away from the second semiconductor region, and an electrically conductive mirror layer arranged between the first semiconductor region and the electrically conductive contact layer, and laterally protruding at the edge by the first semiconductor region and the electrically conductive contact layer so that between the first semiconductor region and the electrically conductive contact layer there is an interspace in which a protective layer is arranged for protecting the mirror layer, wherein the electrically conductive contact layer extends laterally to an edge of the first semiconductor region, and the electrically conductive contact layer consists of Ni.
Bibliography:Application Number: DE20171102036T