Verfahren zum Herstellen eines Siliziumcarbid-Substrats

• Main Authors: NISHIGUCHI, TARO, FUJIWARA, SHINSUKE, UETA, SHUNSAKU, OOI, NAOKI, HORI, TSUTOMU
• Format: Patent
• Language: German
• Published: 08.01.2015
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

A method of manufacturing a silicon carbide substrate has the following steps. A silicon carbide source material is partially sublimated. After partially sublimating the silicon carbide source material, a seed substrate having a main surface is placed in a growth container. By sublimating the remainder of the silicon carbide source material in the growth container, a silicon carbide crystal grows on the main surface of the seed substrate. In this way, an increase of dislocations in the main surface of the seed substrate can be suppressed, thereby providing a method of manufacturing a silicon carbide substrate having few dislocations.