Nitridfilmstruktur und Verfahren zum Herstellen derselben

• Main Authors: Kim, Jong-Hak, Char, Kook-Heon, Yoon, Eui-Joon, Woo, Hee-Je, Oh, Se-Won
• Format: Patent
• Language: German
• Published: 20.04.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Halbleiterdünnschichtstruktur mit: einem Nicht-Nitrid-Substrat (100; 300; 400; 500; 600; 700; 800; 900); einer Mehrzahl von auf das Substrat aufgebrachten hohlen Partikeln (105; 305; 405; 505; 605; 705; 805'; 905); und einer über dem Substrat (100; 300; 400; 500; 600; 700; 800; 900) ausgebildeten dünnen Nitridschicht (120; 115, 125; 315; 415; 515, 520, 530, 540; 615, 620; 715, 720, 730; 815; 915), wobei die Nitridschicht gebildet ist durch Wachsen über dem in einer Umgebung der hohlen Partikel freiliegenden Substrat derart, dass sie sich über den hohlen Partikeln vereint, wobei der thermische Expansionskoeffizient des Substrates größer ist als der der dünnen Nitridschicht, und die Durchbiegung des Substrates verhindert ist durch Komprimierung der hohlen Partikel durch die Nitridschicht während des Abkühlens nach dem Wachsen der dünnen Nitridschicht. Provided are a nitride thin film structure and a method of forming the same. If a nitride thin film is formed on a substrate that is not a nitride, many defects are generated by a difference in lattice constants between the substrate and the nitride thin film. Also, there is a problem of warping the substrate by a difference in thermal expansion coefficients between the substrate and the nitride thin film. In order to solve the problems, the present invention suggests a thin film structure in which after coating hollow particles, i.e. hollow structures on the substrate, the nitride thin film is grown thereon and the method of forming the thin film structure. According to the present invention, since an epitaxial lateral overgrowth (ELO) effect can be obtained by the hollow structures, high-quality nitride thin film can be formed. Since a refractive index in the thin film structure is adjusted, there is an effect of increasing light extraction efficiency during manufacturing the thin film structure into a light emitting device such as a light emitting diode (LED). Also, when thermal expansion coefficient of the substrate is greater than that of the nitride thin film, total stress of the nitride thin film is decreased according to the compression of the hollow structures in the nitride thin film such that there is also an effect of preventing warpage of the substrate.