P-Kanal-Feldeffekttransistor aus nanokristallinem Diamant

An electrically conducting p-channel diamond lattice field effect transistor (DLFET) composed of nanocrystalline diamond having at least about 10 20 atoms/cm3 of boron in conduction channel is disclosed, along with methods of making the same. The nanocrystalline diamond may be characterized by havin...

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Bibliographic Details
Main Author KHAN, ADAM H
Format Patent
LanguageGerman
Published 10.06.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An electrically conducting p-channel diamond lattice field effect transistor (DLFET) composed of nanocrystalline diamond having at least about 10 20 atoms/cm3 of boron in conduction channel is disclosed, along with methods of making the same. The nanocrystalline diamond may be characterized by having an average grain size diameter of less than 1 mum, and in particular, grain sizes on the order of 10 to 20 nm, for improved performance of the DLFET.
Bibliography:Application Number: DE20071101892T