Halbleitende Bismutsulfide mit neuen Eigenschaftskombinationen und deren Verwendung in der Thermoelektrik und Photovoltaik

Modified bismuth sulfide composition (I) is new. Modified bismuth sulfide composition (I) of formula (Bi xE yS zMg u) is new. E : germanium and/or silicon; x : 1.9-2.1; y : 0.001-0.08; z : 2.95-3.05; and u : 0-2y. Independent claims are also included for: (1) a semiconductor material (II), comprisin...

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Main Author STERZEL, HANS-JOSEF
Format Patent
LanguageGerman
Published 17.01.2008
Subjects
BASIC ELECTRIC ELEMENTS
CHEMISTRY
COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR
INORGANIC CHEMISTRY
LAUNDERING
LAUNDERING, DRYING, IRONING, PRESSING OR FOLDING TEXTILEARTICLES
METALLURGY
SEMICONDUCTOR DEVICES
TEXTILES
TREATMENT OF TEXTILES OR THE LIKE
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Abstract Modified bismuth sulfide composition (I) is new. Modified bismuth sulfide composition (I) of formula (Bi xE yS zMg u) is new. E : germanium and/or silicon; x : 1.9-2.1; y : 0.001-0.08; z : 2.95-3.05; and u : 0-2y. Independent claims are also included for: (1) a semiconductor material (II), comprising (I); and (2) the preparation of (II) comprising reaction of mixtures of the respective elements or their alloys at at least 800[deg]C.
AbstractList Modified bismuth sulfide composition (I) is new. Modified bismuth sulfide composition (I) of formula (Bi xE yS zMg u) is new. E : germanium and/or silicon; x : 1.9-2.1; y : 0.001-0.08; z : 2.95-3.05; and u : 0-2y. Independent claims are also included for: (1) a semiconductor material (II), comprising (I); and (2) the preparation of (II) comprising reaction of mixtures of the respective elements or their alloys at at least 800[deg]C.
Author STERZEL, HANS-JOSEF
Author_xml – fullname: STERZEL, HANS-JOSEF
BookMark eNqNjLsOgkAURCm08PUP21iaLBi19oGxtCC2ZIVBbljuGvauJn69aPwAq3nkzIyjATvGKHqdjL1akIBLqB35NogPtqI-tSSKEcAqpRvYF7WpxDeuvRIboX7PKnCpSnS9u6B79ieBb4r406msRtc6WDTSUfNFz7UT93BWDDXTaFgZ6zH76SSaH9Nsf1rg7nL4uynAkPyQxnGi9Vprnaw329XyX-4Nz-5LfA
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
ExternalDocumentID DE112006000267A5
GroupedDBID EVB
ID FETCH-epo_espacenet_DE112006000267A53
IEDL.DBID EVB
IngestDate Fri Aug 02 08:54:43 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language German
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_DE112006000267A53
Notes Application Number: DE20061100267T
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080117&DB=EPODOC&CC=DE&NR=112006000267A5
ParticipantIDs epo_espacenet_DE112006000267A5
PublicationCentury 2000
PublicationDate 20080117
PublicationDateYYYYMMDD 2008-01-17
PublicationDate_xml – month: 01
  year: 2008
  text: 20080117
  day: 17
PublicationDecade 2000
PublicationYear 2008
RelatedCompanies BASF AG
RelatedCompanies_xml – name: BASF AG
Score 2.6870325
Snippet Modified bismuth sulfide composition (I) is new. Modified bismuth sulfide composition (I) of formula (Bi xE yS zMg u) is new. E : germanium and/or silicon; x :...
SourceID epo
SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
CHEMISTRY
COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR
INORGANIC CHEMISTRY
LAUNDERING
LAUNDERING, DRYING, IRONING, PRESSING OR FOLDING TEXTILEARTICLES
METALLURGY
SEMICONDUCTOR DEVICES
TEXTILES
TREATMENT OF TEXTILES OR THE LIKE
Title Halbleitende Bismutsulfide mit neuen Eigenschaftskombinationen und deren Verwendung in der Thermoelektrik und Photovoltaik
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080117&DB=EPODOC&locale=&CC=DE&NR=112006000267A5
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwhV3dS8MwED_mFPVNp-LnyIP2rYizXdqHIq7tGMI-kDn2NtI1xdI1HWuK4F_vJW5-vOhbSELKHf3l7pK7XwCuLWfO7XnUMmPHpSYikZqR68Qm5eheM5ZQylU1cn_Q7r1YT1N7WgOxqYXRPKFvmhwRETVHvEu9Xy-_D7ECnVtZ3kYpdhUP3bEXGJvo2FEUZ0bQ8cLRMBj6hu97QWgMnj10KxT1iAo56KO9BdvKlVZc--GkoypTlj_NSvcAdka4opCHUIt5A_b8zetrDdjtry-9sbnGX3kE7z22iBY81QfXpJOWeSXLapGgJCRPJRG84oKEimETo1aWyDIrcox9tUQ4UomYqNc5BZmofGgRI9RJKlQfwR9mlRdohTK5SjM9dfRayAL3L9REdgw33XDs90wUYvaltVkQ_pb5_gTqAr91CgRDGEr1lVjELdtKmPK0Iuq2nDZjLm-dQfPvtc7_m3AB-5-JFXfmHb2EulxV_Aqtt4yaWuUfTl-fgg
link.rule.ids 230,309,786,891,25594,76906
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwhV1LT8MwDLbGQIwbDBDPkQPsViFGu7SHCrG204C9hMa029Suqai6ptOaColfjxM2Hhe4RUmUyla_2E7sLwCXujljxixoaKFpUQ2RSLXAMkONMnSvfT-ilMlq5F6_2XnRHyfGpAR8XQujeELfFDkiImqGeBdqv158H2K5Krcyvw5i7Mru2iPbra-jY1NSnNXdlu0NB-7AqTuO7Xr1_rONboWkHpEhB703NmCTSoZe6T6NW7IyZfHTrLR3YWuIK3KxB6WQVaHirF9fq8J2b3Xpjc0V_vJ9eO_482DOYnVwTVpxnhYiL-YRSkLSWBDOCsaJJxk2MWr1I5EnWYqxr5IIRwoeEvk6JydjmQ_NQ4Q6ibnsI_jDLNMMrVAilnGipg5fM5Hh_oWaSA7gqu2NnI6GQky_tDZ1vd8y3x5CmeO3joBgCEOpuhILmG7okS89rYBaDbPp-xZrHEPt77VO_ptwAZXOqNeddh_6T6ew85lkcaPd0DMoi2XBztGSi6Cm1P8B7iqibw
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Halbleitende+Bismutsulfide+mit+neuen+Eigenschaftskombinationen+und+deren+Verwendung+in+der+Thermoelektrik+und+Photovoltaik&rft.inventor=STERZEL%2C+HANS-JOSEF&rft.date=2008-01-17&rft.externalDBID=A5&rft.externalDocID=DE112006000267A5