Halbleitende Bismutsulfide mit neuen Eigenschaftskombinationen und deren Verwendung in der Thermoelektrik und Photovoltaik

Modified bismuth sulfide composition (I) is new. Modified bismuth sulfide composition (I) of formula (Bi xE yS zMg u) is new. E : germanium and/or silicon; x : 1.9-2.1; y : 0.001-0.08; z : 2.95-3.05; and u : 0-2y. Independent claims are also included for: (1) a semiconductor material (II), comprisin...

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Bibliographic Details
Main Author STERZEL, HANS-JOSEF
Format Patent
LanguageGerman
Published 17.01.2008
Subjects
BASIC ELECTRIC ELEMENTS
CHEMISTRY
COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR
INORGANIC CHEMISTRY
LAUNDERING
LAUNDERING, DRYING, IRONING, PRESSING OR FOLDING TEXTILEARTICLES
METALLURGY
SEMICONDUCTOR DEVICES
TEXTILES
TREATMENT OF TEXTILES OR THE LIKE
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Summary:Modified bismuth sulfide composition (I) is new. Modified bismuth sulfide composition (I) of formula (Bi xE yS zMg u) is new. E : germanium and/or silicon; x : 1.9-2.1; y : 0.001-0.08; z : 2.95-3.05; and u : 0-2y. Independent claims are also included for: (1) a semiconductor material (II), comprising (I); and (2) the preparation of (II) comprising reaction of mixtures of the respective elements or their alloys at at least 800[deg]C.
Bibliography:Application Number: DE20061100267T