Galliumnitrid-Einkristallsubstrat und Verfahren zur Herstellung desselben

• Main Authors: HIRAMATSU, KAZUMASA, BOHYAMA, SHINYA, MIYAKE, HIDETO, MAEDA, TAKAYOSHI, ONO, YOSHINOBU
• Format: Patent
• Language: German
• Published: 30.03.2006
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention relates to a method for producing an epitaxial substrate having a III-V group compound semiconductor crystal represented by the general formula InxGayAlzN (wherein, x+y+z=1, 0<=x<=1, 0<=y<=1, 0<=z<=1) having reduced dislocation density, comprising a first step of covering with a mask made of a different material from the III-V group compound semiconductor so that only portions around points of the crystal constitute openings by using a III-V group compound semiconductor crystal having a plurality of projection shapes and a second step of growing the III-V group compound semiconductor crystal laterally by using the III-V group compound semiconductor crystal at the opening as a seed crystal. According to the present invention, an epitaxial substrate having a III-V group compound semiconductor crystal having low dislocation density and little warp is obtained.