Hartmaske mit hoher Selektivität für IR-Sperrschichten zur Herstellung eines ferroelektrischen Kondensators
The present invention provides a ferroelectric device relatively free of fences by using a hardmask having high etching selectivity relative to an underlying barrier layer. The present invention also includes a method for suppressing the fences clinging to the sidewalls of ferroelectric devices. Add...
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Main Authors | , , , , |
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Format | Patent |
Language | German |
Published |
29.12.2005
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Abstract | The present invention provides a ferroelectric device relatively free of fences by using a hardmask having high etching selectivity relative to an underlying barrier layer. The present invention also includes a method for suppressing the fences clinging to the sidewalls of ferroelectric devices. Additionally, the present invention provides a ferroelectric device having a hardmask relatively thin compared to an underlying barrier layer when compared to prior art devices. |
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AbstractList | The present invention provides a ferroelectric device relatively free of fences by using a hardmask having high etching selectivity relative to an underlying barrier layer. The present invention also includes a method for suppressing the fences clinging to the sidewalls of ferroelectric devices. Additionally, the present invention provides a ferroelectric device having a hardmask relatively thin compared to an underlying barrier layer when compared to prior art devices. |
Author | ZHUANG, HAOREN TOMIOKA, KAZUHIRO KUMURA, YOSHINORI KANAYA, HIROYUKI EGGER, ULRICH |
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RelatedCompanies | KABUSHIKI KAISHA TOSHIBA, TOKIO/TOKYO INFINEON TECHNOLOGIES AG |
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Snippet | The present invention provides a ferroelectric device relatively free of fences by using a hardmask having high etching selectivity relative to an underlying... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS GENERATION SEMICONDUCTOR DEVICES |
Title | Hartmaske mit hoher Selektivität für IR-Sperrschichten zur Herstellung eines ferroelektrischen Kondensators |
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