Hartmaske mit hoher Selektivität für IR-Sperrschichten zur Herstellung eines ferroelektrischen Kondensators

The present invention provides a ferroelectric device relatively free of fences by using a hardmask having high etching selectivity relative to an underlying barrier layer. The present invention also includes a method for suppressing the fences clinging to the sidewalls of ferroelectric devices. Add...

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Bibliographic Details
Main Authors KUMURA, YOSHINORI, TOMIOKA, KAZUHIRO, EGGER, ULRICH, KANAYA, HIROYUKI, ZHUANG, HAOREN
Format Patent
LanguageGerman
Published 29.12.2005
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
GENERATION
SEMICONDUCTOR DEVICES
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Summary:The present invention provides a ferroelectric device relatively free of fences by using a hardmask having high etching selectivity relative to an underlying barrier layer. The present invention also includes a method for suppressing the fences clinging to the sidewalls of ferroelectric devices. Additionally, the present invention provides a ferroelectric device having a hardmask relatively thin compared to an underlying barrier layer when compared to prior art devices.
Bibliography:Application Number: DE20041100192T