Verfahren zur Herstellung einer integrierten Schaltung mit nichtflüchtigem Speicherbauelement ohne Bitleitungskurzschlüsse

A manufacturing method for a MirrorBit(R) Flash memory includes providing a semiconductor substrate and depositing a charge-trapping dielectric layer. First and second bitlines are implanted and a wordline layer is deposited. A hard mask layer is deposited over the wordline layer. The hard mask is o...

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Bibliographic Details
Main Authors RAMSBEY, MARK T, SHIRAIWA, HIDEHIKO, KAMAL, TAZRIEN, WU, YIDER, LINGUNIS, EMMANUIL, YANG, JEAN Y
Format Patent
LanguageGerman
Published 21.02.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A manufacturing method for a MirrorBit(R) Flash memory includes providing a semiconductor substrate and depositing a charge-trapping dielectric layer. First and second bitlines are implanted and a wordline layer is deposited. A hard mask layer is deposited over the wordline layer. The hard mask is of a material formulated for removal without damaging the charge-trapping dielectric layer. A photoresist is deposited over the wordline layer and used to form a hard mask. The photoresist is removed. The wordline layer is processed using the hard mask to form a wordline and the hard mask is removed. A salicide is grown without short-circuiting the first and second bitlines.
Bibliography:Application Number: DE20031092392T