Etching of tungsten involves using a gas mixture that contains nitrogen trifluoride, hydrogen bromide, and oxygen

A process for etching tungsten, comprises using a gas mixture that contains NF3, HBr and O2. The etching is anisotropic, and the mixture contains an inert gas. Etching takes place at 30-70o>C. In einem Ätzprozessschritt zum Ätzen von Wolfram wird ein Gasgemisch verwendet, das NF¶3¶, HBr und O¶2¶...

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Bibliographic Details
Main Author GENZ, OLIVER
Format Patent
LanguageEnglish
German
Published 21.07.2005
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE
SEMICONDUCTOR DEVICES
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Summary:A process for etching tungsten, comprises using a gas mixture that contains NF3, HBr and O2. The etching is anisotropic, and the mixture contains an inert gas. Etching takes place at 30-70o>C. In einem Ätzprozessschritt zum Ätzen von Wolfram wird ein Gasgemisch verwendet, das NF¶3¶, HBr und O¶2¶ enthält. Dadurch kann unabhängig voneinander die Seitenwandpassivierung der Wolfram-Strukturen und die Selektivität zu Polysilizium kontrolliert werden.
Bibliography:Application Number: DE2003158025