Grabenkondensator und Verfahren zur Herstellung eines Grabenkondensators

Production of a trench capacitor (1) in a semiconductor substrate (10) comprises providing a separating layer (6) on a dielectric layer (5) and forming an inner electrode (3) made from a metal or metal compound and extending over a collar region (12) and active region (13). Independent claims are al...

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Bibliographic Details
Main Authors KUDELKA, STEPHAN, SEIDL, HARALD, SAENGER, ANNETTE, GUTSCHE, MARTIN
Format Patent
LanguageGerman
Published 05.04.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Production of a trench capacitor (1) in a semiconductor substrate (10) comprises providing a separating layer (6) on a dielectric layer (5) and forming an inner electrode (3) made from a metal or metal compound and extending over a collar region (12) and active region (13). Independent claims are also included for the following: (1) Trench capacitor produced by the above process; (2) Memory cell containing the trench capacitor; and (3) Memory arrangement containing the memory cell.
Bibliography:Application Number: DE20031037858