CVD reactor for producing a silicon carbide single crystalline layer comprises a reaction chamber, a susceptor arranged in the reaction chamber, and a gas inlet with a diffuser and a homogenizing unit

• Main Authors: THOMAS, BERND, BARTSCH, WOLFGANG
• Format: Patent
• Language: English; German
• Published: 29.07.2004
• Edition: 7
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

CVD reactor comprises a reaction chamber (30), a susceptor (3) arranged in the reaction chamber for receiving a base body (6) to be epitaxially coated using CVD, and a gas inlet (201) with a diffuser (21) and a homogenizing unit for homogenizing the gas flow (50) from the diffuser in the direction of the susceptor. Der CVD-Reaktor hat einen Reaktionsraum (30), einen im Reaktionsraum (30) angeordneten Suszeptor (3) zur Aufnahme eines mittels CVD-Epitaxie zu beschichtenden Grundkörpers (6), und einen Gaseinlass (201) mit einem ersten Diffusor (21). Der Gaseinlass (201-206) weist Homogenisierungsmittel zur Homogenisierung des aus dem ersten Diffusor (21) in Richtung des Suszeptors (3) austretenden Gasflusses (50) auf.