CVD reactor for producing a silicon carbide single crystalline layer comprises a reaction chamber, a susceptor arranged in the reaction chamber, and a gas inlet with a diffuser and a homogenizing unit
CVD reactor comprises a reaction chamber (30), a susceptor (3) arranged in the reaction chamber for receiving a base body (6) to be epitaxially coated using CVD, and a gas inlet (201) with a diffuser (21) and a homogenizing unit for homogenizing the gas flow (50) from the diffuser in the direction o...
Saved in:
Main Authors | , |
---|---|
Format | Patent |
Language | English German |
Published |
29.07.2004
|
Edition | 7 |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | CVD reactor comprises a reaction chamber (30), a susceptor (3) arranged in the reaction chamber for receiving a base body (6) to be epitaxially coated using CVD, and a gas inlet (201) with a diffuser (21) and a homogenizing unit for homogenizing the gas flow (50) from the diffuser in the direction of the susceptor.
Der CVD-Reaktor hat einen Reaktionsraum (30), einen im Reaktionsraum (30) angeordneten Suszeptor (3) zur Aufnahme eines mittels CVD-Epitaxie zu beschichtenden Grundkörpers (6), und einen Gaseinlass (201) mit einem ersten Diffusor (21). Der Gaseinlass (201-206) weist Homogenisierungsmittel zur Homogenisierung des aus dem ersten Diffusor (21) in Richtung des Suszeptors (3) austretenden Gasflusses (50) auf. |
---|---|
Bibliography: | Application Number: DE2003101949 |