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The device has an organic semiconductor active layer (2) between a source and a drain. A ferroelectric gate-insulating layer (5) is formed on an organic active layer, and a gate (6) is formed on the insulating layer. Conductivity of the semiconductor active layer that forms a source-drain channel is...
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Main Author | |
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Format | Patent |
Language | German |
Published |
07.02.2008
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Subjects | |
Online Access | Get full text |
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Summary: | The device has an organic semiconductor active layer (2) between a source and a drain. A ferroelectric gate-insulating layer (5) is formed on an organic active layer, and a gate (6) is formed on the insulating layer. Conductivity of the semiconductor active layer that forms a source-drain channel is controlled by a charge-carrier concentration and indirectly by a boundary potential of the insulating and active layers. An Independent claim is also included for an optically writeable matrix display panel. |
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Bibliography: | Application Number: DE20031000746 |