Verfahren zum Herstellen eines Soi-Bauteils mit unterschiedlichen Siliziumdicken

A method of manufacturing a semiconductor device includes providing a silicon semiconductor layer over an insulating layer, and partially removing a first portion of the silicon layer. The silicon layer includes the first portion and a second portion, and a thickness of the second portion is greater...

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Bibliographic Details
Main Authors CHAN, DARIN, EN, WILLIAM G, MICHAEL, MARK W
Format Patent
LanguageGerman
Published 14.10.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of manufacturing a semiconductor device includes providing a silicon semiconductor layer over an insulating layer, and partially removing a first portion of the silicon layer. The silicon layer includes the first portion and a second portion, and a thickness of the second portion is greater than a thickness of the first portion. Initially, the first and second portions of the silicon layer initially can have the same thickness. A semiconductor device is also disclosed.
Bibliography:Application Number: DE20021097583T