BAW-Resonator mit akustischem Reflektor und Filterschaltung

The multilayer acoustic reflector (110) for the BAW (Bulk Acoustic Wave) resonator has multiple layers (112-120) of alternate high acoustic impedance and low acoustic impedance material. It is mounted under a piezoelectric layer (102) with electrodes on top (104) and bottom (106) surfaces. The refle...

Full description

Saved in:
Bibliographic Details
Main Authors MARKSTEINER, STEPHAN, FATTINGER, GERNOT, AIGNER, ROBERT, KAITILA, JYRKI
Format Patent
LanguageGerman
Published 28.08.2008
Subjects
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS
RESONATORS
Online AccessGet full text

Cover

More Information
Summary:The multilayer acoustic reflector (110) for the BAW (Bulk Acoustic Wave) resonator has multiple layers (112-120) of alternate high acoustic impedance and low acoustic impedance material. It is mounted under a piezoelectric layer (102) with electrodes on top (104) and bottom (106) surfaces. The reflector is formed on top of a substrate layer (108). The configuration of the reflector layers is chosen so that the transmissivity for longitudinal and shear waves less than -10 dB in the region of the resonance frequency.
Bibliography:Application Number: DE20021062056