Production of boron-doped silicon wafer, used as substrate for electronic element, e.g. processor or memory element, includes polishing with aqueous alkaline polish containing silica and alkali metal or ammonium polyaminocarboxylate

In producing boron-doped silicon (Si:B) wafers by dividing Si:B crystal into wafers, machining, wet chemical etching front and back to remove not less than 10 mum Si and continuously polishing at least front, to remove not less than 10 mum Si, with aqueous polish, pH 10-12, containing 0.1-10 wt.% si...

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Bibliographic Details
Main Author WENSKI, GUIDO
Format Patent
LanguageEnglish
German
Published 18.12.2003
Edition7
Subjects
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