Lithographic structurization of substrate with electron beam, used for making photo-mask, e.g. of chrome-on-glass type, uses system of electroconductive, water-insoluble lower resist layer and upper layer of electron beam resist

Lithographic structurization of a substrate with an electron beam, especially for producing photo-masks, comprises production of a resist system (1, 2) on the substrate (10) by applying electroconductive, water-insoluble lower resist layer(s) (1) and then upper resist layer(s) (2) of electron beam-s...

Full description

Saved in:
Bibliographic Details
Main Authors SCHUMANN, JOERG, ELIAN, KLAUS
Format Patent
LanguageEnglish
German
Published 25.03.2004
Edition7
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
Online AccessGet full text

Cover

More Information
Summary:Lithographic structurization of a substrate with an electron beam, especially for producing photo-masks, comprises production of a resist system (1, 2) on the substrate (10) by applying electroconductive, water-insoluble lower resist layer(s) (1) and then upper resist layer(s) (2) of electron beam-sensitive photoresist. An Independent claim is also included for resist system of the specified layers (1) and (2) on a substrate, for use in an electron writing process for structurizing the substrate, especially a photo-mask. Die Erfindung betrifft ein Verfahren zur lithographischen Strukturierung eines Substrates (10) mittels eines Elektronenstrahls, insbesondere zur Herstellung von Fotomasken, dadurch gekennzeichnet, dass zur Schaffung eines Lacksystems (1, 2) auf dem Substrat (10) zunächst mindestens eine elektrisch leitfähige, wasserunlösliche untere Lackschicht (1) und anschließend mindestens eine obere Lackschicht (2) aus elektronenstrahlsensitiven Fotoresist aufgetragen wird. Mit einem solchen Lacksystem können negative Ladungen abfließen, so dass eine Ablenkung des Elektronenstrahls durch Chraging-Effekte vermieden wird.
Bibliography:Application Number: DE2002141620