Conducting gas in magnetron-vacuum coating system, comprises passing substrate to magnetron, introducing reactive gas on both sides along longitudinal extent in axial direction of target and controllably adjusting reactive gas flow

• Main Author: LINS, VOLKER
• Format: Patent
• Language: English; German
• Published: 20.09.2012
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

Conducting gas in a magnetron-vacuum coating system, comprises: passing a substrate (9) to a magnetron (1) in a direction transverse to the axial longitudinal extension of the longitudinal extent of the magnetron vacuum coating system and forming a plasma between a target (2) of the magnetron and the substrate; introducing reactive gas on both sides along the longitudinal extent in the axial direction of the target and on each side in at least two regions of the plasma; and controllably adjusting the reactive gas flow separately in each of the regions on both sides. Conducting gas in a magnetron-vacuum coating system, comprises: passing a substrate (9) to a magnetron (1) in a direction transverse to the axial longitudinal extension of the longitudinal extent of the magnetron vacuum coating system and forming a plasma between a target (2) of the magnetron and the substrate with the front and rear plasma zone part on a race track in a transport direction (10) of the substrate along the longitudinal extent of the magnetron in an axial direction (5); introducing reactive gas on both sides along the longitudinal extent in the axial direction of the target and on each side in at least two regions of the plasma in the process space located between the target and the substrate at different distances from the target; and controllably adjusting the reactive gas flow separately in each of the regions on both sides. An independent claim is also included for a device for gas supply in magnetron vacuum coating systems comprising a process gas channel in its longitudinal direction and parallel to the axial direction of the target and at least two reactive gas channels, which are arranged in their longitudinal extents parallel to the axial direction of the target and on both sides of target and along the plasma between the target and substrate. The device includes a single magnetron (1), additional reactive gas channels, which are connected to the reactive gas channels on both sides and along the longitudinal extent in the axial direction of the target on each side in at least two regions and at different distances from the target between the target and the substrate, where adjusting devices are arranged and are designed such that they separate the reactive gas into the flow channels from one another, a means for separately measuring the emission spectrum on both sides along the longitudinal extent in the axial direction of the target and on each side in at least two regions, which is arranged at different distances from the target between the target and the substrate, and is connected to a control device for controlling a respective range, ratio of the fluxes of the reactive gas in the reactive gas channels for a respective section. Der Erfindung, die ein Verfahren zur Gasführung an einem Magnetron in Vakuumbeschichtungsanlagen, wobei ein Substrat an dem Magnetron vorbei geführt wird und sich ein Plasma zwischen dem Target des Magnetrons und dem Substrat mit einem in Transportrichtung des Substrats vorderen und hinteren Plasmazonenteil ausbildet, wobei Reaktivgas beiderseits entlang der Längserstreckung des Targets eingeleitet wird, und eine entsprechende Anordnung betrifft, liegt die Aufgabe zugrunde, die Stöchiometrie des Plasmas zwischen Target und Substrat homogenisieren zu können. Dies wird dadurch gelöst, dass Reaktivgas in zumindest zwei Bereichen in unterschiedlicher Entfernung vom Target in den Prozessraum eingeleitet wird und dabei der Reaktivgasfluss beiderseits des Targets und auf jeder Seite getrennt voneinander steuerbar so eingestellt wird, dass das Verhältnis der Flüsse des Reaktivgases auf beiden Sedes Plasmas einstellt.