Device for producing silicon blocks, comprises vessel, which is provided to receive silicon melt and has bottom, inner side, outer side and middle-longitudinal axis, supporting plate, and unit for generating inhomogeneous temperature field

• Main Authors: NAUERT, DOREEN, REIMANN, CHRISTIAN, FREUDENBERG, BERNHARD, DADZIS, KASPARS, PROSKE, STEFAN, FRIEDRICH, JOCHEN, TREMPA, MATTHIAS, RADEL, GUENTER, DIETRICH, MARC
• Format: Patent
• Language: English; German
• Published: 06.10.2011
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; COMPOUNDS THEREOF; CRYSTAL GROWTH; INORGANIC CHEMISTRY; METALLURGY; NON-METALLIC ELEMENTS; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The device (1) for producing silicon blocks, comprises a vessel (2), which is provided for receiving a silicon melt and has a bottom (4), an inner side (6), an outer side (7) and a middle-longitudinal axis, a supporting plate (3), which indirectly contacts with the bottom in an area-wise manner and forms a base together with the bottom, and a unit for generating an inhomogeneous temperature field at the inner side of the bottom. The base has an inhomogeneous heat transfer coefficient. The supporting plate has two areas with different heat transfer coefficients. The device (1) for producing silicon blocks, comprises a vessel (2), which is provided for receiving a silicon melt and has a bottom (4), an inner side (6), an outer side (7) and a middle-longitudinal axis, a supporting plate (3), which indirectly contacts with the bottom in an area-wise manner and forms a base together with the bottom, and a unit for generating an inhomogeneous temperature field at the inner side of the bottom. The base has an inhomogeneous heat transfer coefficient. The supporting plate has two areas with different heat transfer coefficients, and has an inhomogeneous thickness DT xy. The bottom has a homogeneous thickness DB. The base has several recesses, one of which is formed as cooling channel that is impacted with a coolant using a cooling device. A single cooling circuit is provided for each recess. An independent claim is included for a method for producing silicon blocks. Vorrichtung zur Herstellung von Silizium-Blöcken umfassend ein Gefäß (2e) zur Aufnahme einer Silizium-Schmelze mit einem Boden (4e), einer Innenseite (6), einer Außenseite (7) und einer Mittel-Längs-Achse (8) und mindestens eine Tragplatte (3e), welche zumindest bereichsweise in direktem Kontakt mit dem Boden (4e) steht, und welche zusammen mit dem Boden (4e) eine Basis (9e) bildet, und Mittel zur Erzeugung eines inhomogenen Temperaturfeldes auf der Innenseite (6) des Bodens (4e).