Galvanically metallizing semiconductor component, by partially immersing area of flat semiconductor substrate to be metallized into metallization solution that is present in metallization bath, superimposing the area with magnetic field

• Main Authors: BITNAR, BERND, NEUHAUS, HOLGER, KRAUSE, ANDREAS
• Format: Patent
• Language: English; German
• Published: 24.12.2009
• Subjects: APPARATUS THEREFOR; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTROFORMING; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The method comprises partially immersing an area (5) of a flat semiconductor substrate (1) to be metallized into a metallization solution (9) that is present in a metallization bath (8), where the substrate has a first side (2) and a second side (3) opposite to the first side, superimposing the area to be metallized with a magnetic field, and galvanically depositing a metal in the area to be metallized. The magnetic field has an inhomogeneous component and/or homogeneous component. The magnetic field in the metallizing solution has gradients in sections directed to the area to be metallized. The method comprises partially immersing an area (5) of a flat semiconductor substrate (1) to be metallized into a metallization solution (9) that is present in a metallization bath (8), where the substrate has a first side (2) and a second side (3) opposite to the first side, superimposing the area to be metallized with a magnetic field, and galvanically depositing a metal in the area to be metallized. The magnetic field has an inhomogeneous component and/or homogeneous component. The magnetic field in the metallizing solution has gradients in sections directed to the area to be metallized. The homogeneous component is directed parallel to the sides of the semiconductor substrate. A neodymium-iron-boron-magnet is arranged at one of the sides of the semiconductor substrate for generating magnetic fields, and an electromagnet is provided for generating magnetic fields. The sides of the semiconductor substrate are provided with a mask before immersing into the solution. The area to be metallized in the direction parallel to the sides of the substrate has a width of less than 20 mu m. The area to be metallized is coated with a diffusion barrier layer made of ferromagnetic material such as cobalt, nickel and/or its alloy before galvanic deposition. An electroless deposition is provided for coating the area with the diffusion barrier layer. The area is provided with a seed layer made of palladium before coating. A galvanic deposition is provided for introducing the diffusion barrier layer to the seed layer. Bei einem Verfahren zur galvanischen Metallisierung eines Halbleiter-Bauelements wird der zu metallisierende Bereich (5) mit einem Magentfeld überlagert.